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| inchange semiconductor product specification silicon npn darlington power transistors 2SD2561 description with mt-200 package complement to type 2sb1648 applications audio ,series regulator and general purpose pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 5 v i c collector current 17 a i b base current 1 a p c collector power dissipation t c =25 200 w t j junction temperature 150 t stg storage temperature -55~150
inchange semiconductor product specification 2 silicon npn darlington power transistors 2SD2561 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =30ma ;i b =0 150 v v ce( sat ) collector-emitter saturation voltage i c =10a ;i b =10ma 2.5 v v be( sat ) base-emitter saturation voltage i c =10a ;i b =10ma 3.0 v i cbo collector cut-off current v cb =150v ;i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe dc current gain i c =10a ; v ce =4v 5000 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 120 pf f t transition frequency i e =-2a ; v ce =12v 70 mhz switching times t on turn-on time 0.8 s t s storage time 4.0 s t f fall time i c =10a;r l =4 i b1 =-i b2 =10ma v cc =40v 1.2 s ? h fe classifications o p y 5000-12000 6500-20000 15000-30000 inchange semiconductor product specification 3 silicon npn darlington power transistors 2SD2561 package outline fig.2 outline dimensions |
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